期刊文献+

A review on polishing technology of large area free-standing CVD diamond films 被引量:1

A review on polishing technology of large area free-standing CVD diamond films
在线阅读 下载PDF
导出
摘要 Recently,with the rapid development of chemical vapor deposition(CVD)technology,large area free-standing CVD diamond films have been produced successfully.However,the coarse grain size on the surface and the non-uniform thickness of unprocessed CVD diamond films make it difficult to meet the application requirement.The current study evaluates several existing polishing methods for CVD diamond films,including mechanical polishing,chemical mechanical polishing and tribochemical polishing technology. Recently, with the rapid development of chemical vapor deposition(CVD) technology, large area free-standing CVD diamond films have been produced successfully. However, the coarse grain size on the surface and the non-uniform thickness of unprocessed CVD diamond films make it difficult to meet the application requirement. The current study evaluates several existing polishing methods for CVD diamond films, including mechanical polishing, chemical mechanical polishing and tribochemical polishing technology.
出处 《金刚石与磨料磨具工程》 CAS 北大核心 2019年第6期53-61,共9页 Diamond & Abrasives Engineering
基金 Science and technology plan project of Hebei Academy of Sciences(No.191408) Natural Science Foundation of Hebei Province(E2019302005)
关键词 large area FREE-STANDING CVD DIAMOND FILMS MECHANICAL POLISHING chemical MECHANICAL POLISHING tribochemical POLISHING technology large area free-standing CVD diamond films mechanical polishing chemical mechanical polishing tribochemical polishing technology
  • 相关文献

参考文献6

二级参考文献46

  • 1吴承伟,郑林庆.接触因子及其在研究部分流体润滑中的应用[J].润滑与密封,1989,14(3):1-6. 被引量:20
  • 2张朝辉,杜永平,雒建斌.CMP中接触与流动关系的分析[J].科学通报,2006,51(16):1961-1965. 被引量:8
  • 3Yamaguchi K, Torikoshi T. Polishing Method and Polishing Apparatus: US, 2007-0049166[P]. 2007- 03-01.
  • 4Nagasubramaniyan C. Retaining Rings and Associated Planarizing Apparatuses, and Related Methods for Planarizing Micro -- device Workpieces: US, 2007-0049179 A1[P]. 2007-03-01.
  • 5Steven Z,Chen H, Gopalakrishna B P. Carrier Head with Edge Control for Chemical Mechanical Polishing:US, 6132298[P]. 2000-10-17.
  • 6Ilya P, Eugene G. Carrier Head with a Retaining Ring for a Chemical Mechanical Polishing System: US, 6143627[P]. 2000-11-07.
  • 7土肥俊郎.半导体平坦化CMP技术[M].王建荣,林必窕,林庆福,译.台北:全华科技图书股份有限公司,1998.
  • 8de la Llera A,Pham X, Siu A, et al. Method and Apparatus for Applying Downward Force on Wafer During CMP : US, 6712670 B2[P]. 2004-03-30.
  • 9Sami F.微加工导论[M].陈迪,译.北京:电子工业出版社,2006.
  • 10Hardikar V V. Methods and Compositions for Chemical Mechanical Planarization of Ruthenium: US, 6869336 BI[P]. 2005-03-22.

共引文献56

同被引文献16

引证文献1

二级引证文献13

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部