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化学机械平坦化中晶圆姿态瞬态调整的数值模拟研究 被引量:2

Numerical Study on the Transient Adjustment of Wafer's Posture in Chemical Mechanical Planarization
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摘要 化学机械平坦化(Chemical mechanical planarization,CMP)是集成电路制造的关键技术之一。晶圆夹持器是CMP系统的核心零部件。为研究万向球头位置对平坦化过程中晶圆姿态瞬态调整能力的影响,采用混合软弹流润滑模型分析抛光垫表面的流动与接触行为,并结合夹持器的瞬态运动方程分析晶圆姿态的动态变化过程。分析结果表明,夹持器姿态的调整能力随万向球头的中心高度增加而提高,摩擦力矩的增加有利于晶圆姿态稳定在平衡位置,但同时接触应力不均匀性增加。因此,合理设计夹持器结构对CMP加工质量非常重要,提出的瞬态混合润滑模型对夹持器的动态特性进行分析可以为设计提供非常有意义的理论指导。 Chemical mechanical planarization (CMP) is one of the key techniques in integrated circuit manufacture. Wafer cartier is a very important component of CMP system. For studying the effect of position of ball joint on the ability of transient adjustment of wafer carrier orientation in planarization process, mixed soft elastohydrodynamic lubrication model is adopted to analyze the flow and contact behaviors over the pad surface, and the transient change of wafer orientation is simulated combining the transient motion equations of carrier. The simulation results indicate that the higher the height of the ball joint, the faster the orientation adjustment of wafer. The disadvantage of higher ball joint height is that the maximum nominal contact pressure is increased. The increasing of friction moment is of benefit to maintain the wafer in a balance posture, but non-uniformity of contact pressure distribution is increased. Therefore, the reasonable design of carrier structure is very important for the performance of CMP. The analysis of dynamic characteristics of carder using the transient mixed lubrication model proposed can offer helpful theoretical guidance to the design of carrier.
出处 《机械工程学报》 EI CAS CSCD 北大核心 2014年第1期199-204,212,共7页 Journal of Mechanical Engineering
基金 国家自然科学基金(51105057) 中国博士后科学基金(201104598) 中央高校基本科研业务费专项资金(2012QN051 3132013062)资助项目
关键词 化学机械平坦化 弹流润滑 瞬态调整 转动惯量 chemical mechanical planarization elastohydrodynamic lubrication transient adjustment moment of inertia
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  • 1TICHY J, LEVERT J A, SHAN Lei, et al. Contact mechanics and lubrication hydrodynamics of chemical mechanical polishing[J]. Journal of The Electrochemical Society, 1999, 146(4): 1523-1528.
  • 2KIM A T, SEOK J, TICHY J A, et al. Soft elastohydrodynamic lubrication with roughness[J]. Journal ofTribology, 2003, 125(2): 448-461.
  • 3张朝辉,杜永平,雒建斌.CMP中接触与流动关系的分析[J].科学通报,2006,51(16):1961-1965. 被引量:8
  • 4周平,郭东明,康仁科,金洙吉.电化学机械平坦化抛光垫混合软弹流润滑行为数值研究[J].机械工程学报,2012,48(7):180-185. 被引量:3
  • 5PATIR N, CHENG H S. An application of average flow model to lubrication between rough sliding surfaces[J]. Journal of Lubrication Technology, 1979, 101(2): 220-229.
  • 6吴承伟,郑林庆.接触因子及其在研究部分流体润滑中的应用[J].润滑与密封,1989,14(3):1-6. 被引量:20
  • 7JIN X Q, KEER L M, WANG Q. A 3D EHL simulation of CMP[J]. Journal of Electrochemical Society, 2005,152(1): G7-G15.
  • 8MOON Y, DORNFELD D A. Investigation of the relationship between Preston's coefficient and friction coefficient in chemical mechanical polishing (CMP) of silicon[C]// ASPE 1998 Spring Topical Meeting on Silicon Machining,, 1998, Monterey, CA. Raleiph: American Society for Precision Engineering, 1998: 47-48.

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