摘要
在离子束溅射和离子辅助沉积光学薄膜技术中,离子源是其中最关键的单元技术之一。通 过测试宽束离子源束流密度的空间分布,研究了影响离子束均匀性分布的两个主要因素:加速电压和E/B。结果表明,随着加速电压的增加,离子束束流密度的分布趋向均匀;而E/B对离子束均匀性的影响不大。
In ion-beam sputtering deposition and ion-beam aid deposition thin film techniques, ion-beam source is one of the key techniques. Through testing density and spatial distribution of the broad-beam ion source, two main factors-accelerating voltage and E/B affecting uniformity distribution of ion-beam are studied. The results show that the ion-beam density distribution will tend to uniform with the increasing of accelerating voltage. The influence of E/B on ion-beam uniformity is small.
出处
《光电工程》
EI
CAS
CSCD
北大核心
2002年第5期59-61,共3页
Opto-Electronic Engineering
基金
国家863高技术项目资助
关键词
离子束溅射
离子源
均匀性
光学薄膜
Ion beam sputtering
Ion source
Uniformity
Optical thin films 引
