摘要
本文详细地讨论了多量子阱激光器材料的结构设计、量子阱结构对激射波长的影响以及波导限制层铝含量x值对光限制因子的影响.用由密度矩阵理论推导的线性光增益公式,计算了光增益.从受激阈值条件得到最佳阱数和最佳腔长.为多量子阱激光器材料结构设计提供了有效的方法.
This paper detailed the structure design for multiquantum-well lasers, the influence of quantum-well structure on excited wavelength and the dependence of optical limited factor onaluminium mole fraction x in waveguide cladding layer. The optical gain was calculatedby linear optical gain expression developed with density-matrix theory. According to thethreshold condition, the optimal cavity length and the optimal well number were obtained.The optimal structure design for the multiquantum-well laser was provided by this method.
基金
中国科学院重点资助
关键词
量子阱
激光器
结构设计
波长
阈值
Semiconducting gallium arsenide
Semiconductor quantum wells
