摘要
采用MOCVD方法在硅衬底上生长了带应力超晶格的GaAlAs/GaAs单量子阱外延片,并用质子轰击隔离法制成10微米条形单量子阱激光器.在室温下加脉冲电流(重复频率26KHz,脉宽1μs)观察到受激发射.最低阈电流92mA、激射波长849.2nm,外微分量子效率11％.
GaAlAs/GaAs layers with SLS were grown on Si substrates by MOCVD. The isolatedstripe of 10 μm stripe LDs were made by proton bombartment.LDs were stimulated under pu-lse 20 kHz, lμs at 295K. The lowest threshold current and peak wavelength are 92 mA and849.2 nm, respectively.The external differential quantum efficiency is 11%.
基金
国家自然科学基金
关键词
半导体
激光器
光电集成
量子阱
硅
Semiconductor Laser
OEIC (Optoelectronic Integrated Circuit)
GaAs grown on Si
Mismatched Hetero Epitaxial
