期刊文献+

RF MEMS开关的电磁性能仿真分析 被引量:2

Simulation and Analysis of Electromagnetic Performance of RF MEMS Switches
在线阅读 下载PDF
导出
摘要 射频微系统是一种传感器、激励器、微机械、微电子的集成,由亚毫米级的移动部件组成,并能够提供射频功能。该文对并联式射频微系统开关展开了建模和电磁分析,通过CoventorWare建模,利用ANSYS HFSS电磁仿真,分析了不同主要结构参数对典型并联式射频开关电磁性能的影响,总结了不同上电极薄膜宽度、绝缘层厚度等参数对电磁性能的影响趋势:开关的隔离度随上电极宽度的增加而增大,绝缘层厚度的增大能够减小开关的反射损耗,但同时会增加开关的开启电压。 The RF microsystems are an integration of sensors, actuators, microstructures and microelectronics. It consists of sub-millimeter-scale moving parts and provides RF functionality. In this paper, the modelling and electromagnetic simulation of RF MEMS shunt switch are carried out by using CoventorWare and ANSYS HFSS respectively. The effects of main structural parameters on the performance of the RF MEMS shunt switch are analyzed, and the influence of parameters such as the width of the upper electrode and the thickness of the insulating layer on the electromagnetic properties is summarized. The isolation of the switch increases with the increase of the width of the upper electrode. The increase of the thickness of the insulating layer can reduce the reflection loss of the switch, but at the same time it increases the switch-on voltage.
作者 赵治国 马谢 宋滔 ZHAO Zhiguo;MA Xie;SONG Tao(North-China Electromagnetic Protection Research Institute,Taiyuan 030032,China;China Electronics Technology Cyber Security Co.,Ltd.,Chengdu 610093,China)
出处 《压电与声光》 CAS CSCD 北大核心 2018年第3期475-478,共4页 Piezoelectrics & Acoustooptics
关键词 射频微系统 电磁仿真 建模 RF microsystems electromagnetic simulation modeling
  • 相关文献

参考文献3

二级参考文献17

  • 1胡梅丽,赖宗声,茅惠兵,忻佩胜,沈德新.RF/MW MEMS开关中聚酰亚胺的牺牲层技术研究[J].微电子学,2005,35(1):5-7. 被引量:9
  • 2[1]Rebeiz G M, Muldavin J B. RF MEMS Switches and Switch Circuits. IEEE Microwave Magazine,2001,2 (4): 59~ 71
  • 3[2]Rebeiz G M. RF MEMS Switches: Status of The Technology. The 12th International Conference on Solid State Sensors, Actuators, and Microsystems,Transducers' 03, Boston,2003
  • 4[3]Rebeiz G M, Tan G L, Hayden J S. RF MEMS Phase Shifters:Design and Applications. IEEE Microwave Magazine, 2002,3 (6): 72~ 81
  • 5[4]Rebeiz G M. RF MEMS: Theory, Design, and Technology. New Jersey: John Wiley & Sons, 2003
  • 6[8]Bouchaud J, Wicht H. RF MEMS Analysis, Forecasts and Technology Review. Chip Unaxis,2003,9:26~29
  • 7S.C.Bera,K.Basak, V.K.Jain,"Schottky diode-based microwave limiter with adjustable threshold power level",Microwave and Optical Technology Letters 2010,vol.52,no 7,pp-1671 -1673.
  • 8E.Gatard, R.Sommet, P.Bouysse "High power S Band limiter simu- lation with a physics-based accurate nonlinear PIN diode model", Proc.European Microwave Week 2007 Conference, pp.72-75.
  • 9R.Malmqvist,"Monolithic integration of millimeter-wave RF- MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology",IEEE MTT-S International Microwave Workshop Se- ries on Millimeter Wave Integration Technologies2011,pp-148- 151.
  • 10G.M.Rebeiz,"RF-MEMS:Theory, Design andTechnology",New York: J.Wiley & Sons,2003.

共引文献8

同被引文献14

引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部