摘要
介绍了绝缘栅双极型晶体管(IGBT)功率模块键合引线脱落和焊料层疲劳两种主要的失效形式,分析了各自的失效机理。从IGBT功率模块失效发生部位的角度出发,即按照基于封装失效的状态监测技术和基于芯片失效的状态监测技术的分类方法,综述了国内外IGBT状态监测技术,总结了两种主要失效形式的外部特征参量的变化,认为IGBT状态监测技术是进行故障预测及诊断、提高IGBT功率模块可靠性、减少经济损失的重要方法。对各种监测方法的优缺点及可行性进行了分析,探讨了其进一步的发展方向,对如何准确获取状态参量、如何提高状态监测技术的准确性等关键问题进行了展望。
Two main failure types of the insulated gate bipolar transistor（IGBT） power module bonding wire lift-off and the solder layer fatigue are introduced,and the failure mechanisms are analyzed.From the perspective of the IGBT power module failure location,namely according to the classification method of the condition monitoring technology based on the packaging failure and the condition monitoring technology based on the chip failure,IGBT condition monitoring technologies at home and abroad are reviewed. The changes of the external characteristic parameters of the two main failure modes are summarized. The IGBT condition monitoring technology is important for fault prediction and diagnosis. It can also increase the IGBT power module reliability and reduce the economic loss. The advantages and disadvantages of various monitoring methods are analyzed,and the feasibility is considered. The direction of the future development of the condition monitoring technology is discussed and the prospects of how to obtain the state parameters accurately and how to improve the accuracy of the condition monitoring technology are put forward.
作者
孔梅娟
李志刚
李雄
王存乐
Kong Meijuan Li Zhigang Li Xiong Wang Cunle(School of Electrical Engineering, Hebei University of Technology, Tianjin 300130, China)
出处
《半导体技术》
CAS
CSCD
北大核心
2017年第2期145-152,共8页
Semiconductor Technology
基金
国家科技支撑计划资助项目(2015BAA09B01)
国家自然科学基金资助项目(51377044)
河北省科技计划资助项目(14214503D
13214303D)
关键词
绝缘栅双极型晶体管(IGBT)功率模块
可靠性
状态监测
特征参量
故障预测
insulated gate bipolar transistor（IGBT） power module
reliability
condition monitoring
characteristic parameter
fault prediction
