摘要
研究了不同溅射气压条件下磁控溅射制备W/Si多层膜过程中的应力变化,使用X射线衍射仪测量了多层膜的结构,使用实时应力测量装置研究W/Si多层膜沉积过程中的应力演变。结果表明,在溅射气压从0.05Pa增加到1.10Pa的过程中,薄膜沉积过程中产生的压应力不断减小并最终过渡为张应力,应力值在溅射气压为0.60Pa时最小,研究结果对减小膜层应力具有指导意义。
We studied the relationship between the conditions under different sputtering pressure and the change of stress during the deposition of W/Si multilayer films.The multilayer structures are measured by using X-ray diffractometer. An online stress measurement device was used to measure the stress evolution during the deposition.Experimental results clearly indicate that the compressive stress decreases with the increase of the sputtering pressure from 0.05 Pa to 1.10 Pa.Then the stress changes to tension.The value of stress reaches the minimum at sputtering pressure of 0.60 Pa.The result is instructive in reducing the film stress.
出处
《光学仪器》
2015年第5期466-470,共5页
Optical Instruments
基金
国家自然科学基金(11305104
11375131)
大科学装置联合基金重点项目(U1432244)
关键词
应力
多层膜
磁控溅射
溅射气压
w/si
stress
multilayers
magnetron sputtering
sputtering pressure
W/Si
