摘要
提出一种新的电压基准结构。利用工作在亚阈值区的MOS管,产生与T2相关的电流进行温度补偿。采用电压预调节结构,改善PSRR。设计了一种低温漂、高PSRR的基于阈值电压的电压基准源。采用SMIC 0.18μm 1P6M工艺对电路进行设计,最小输入电源电压为1.8V,输出基准电压为0.835V。仿真结果表明,在0℃-125℃范围内,温度系数为4.49×10^-5/℃,PSRR在低频时为92dB,在1 MHz时为86.7dB,静态电流为11.8μA。
A new voltage reference structure was presented based on MOSFETs＇ threshold voltage. MOSFETs in subthreshold region were adopted to generate currents related to T2, so the temperature coefficient was compensated. A pre-regulating circuit was adopted to improve the PSRR of the voltage reference. A low temperature coefficient, high PSRR voltage reference was designed based on MOSFETs＇ threshold voltage. It was simulated in SMIC 0.18 μm 1P6M process. The minimum supply voltage was 1.8 V, and the circuit provided a reference voltage of 0. 835 V. The simulated results showed that the circuit had achieved a temperature coefficient of 4.49×10^-5/℃ in the temperature range of 0℃-125℃. The PSRR was 92 dB @ DC and 86.7 dB @ 1 MHz. The circuit＇s quiescent current was 11.8 μA.
出处
《微电子学》
CAS
CSCD
北大核心
2015年第5期581-584,589,共5页
Microelectronics
关键词
电压基准源
阈值电压
温度系数
电源抑制比
Voltage reference
Threshold voltage
Temperature coefficient
PSRR
