摘要
根据带隙基准的基本原理,结合含三条支路负反馈的电流源,设计了一种高阶补偿的带隙基准源电路。实现了对温度的2阶补偿和3阶补偿,获得了一种高电源抑制比、低温漂、不受电源变化影响的电压基准源。设计采用0.35μm CMOS工艺,仿真结果表明,在-40℃～125℃温度范围内,输出电压的温度系数为7.70×10-7/℃,在1kHz时,电源抑制比为-82.3dB。
Based on the principle of bandgap reference and current reference source with 3-branch negative feedback,a bandgap voltage reference source with 2nd-order and 3rd-order temperature compensation was designed.The circuit had a high PSRR and low temperature-drift.The design was based on 0.35 μm CMOS process.Simulation results showed that the bandgap reference source had a temperature coefficient below 7.70 × 10-7 /℃ when the temperature varied from-40 ℃ to 125 ℃,and a PSRR of-82.3 dB at 1 kHz.
出处
《微电子学》
CAS
CSCD
北大核心
2012年第1期34-37,共4页
Microelectronics
基金
国家集成电路重大专项(2009ZX02023-003)
国家重点基础研究发展计划(2007CB935400
2010CB934300
2011CB309602
2011CB932800)
国家自然科学基金资助项目(60906004
60906003
61006087
61076121)
上海市科委资助项目(09QH1402600
1052nm07000)
关键词
带隙基准源
负反馈
电源抑制比
BICMOS
Bandgap reference source
Negative feedback
Power supply rejection ratio
BiCMOS
