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一种新型的BiCMOS带隙基准电压源 被引量:11

A New BiCMOS Bandgap Voltage Reference
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摘要 在分析传统带隙基准结构的基础上,根据当前集成电路设计中对基准电源的低压、低功耗、高电源抑制比的要求,设计了一种结构比较新颖的基准电压源电路。该电路工作在电流模式,带有启动电路和电流补偿电路,静态电流约为10μA,具有较低的温度系数和较高的电源抑制比。 Based on the analysis of the conventional bandgap reference circuitry, a bandgap voltage reference with startup circuit and current compensation circuit is presented. The device works in current mode with supply voltage ranging from 1.8 V to 6 V. It has a quiescent current of only 10 μA, and a low temperature coefficient (〈44 ppm/℃ ), which meets the requirements of bandgap reference for low voltage, low power and high PSRR.
出处 《微电子学》 CAS CSCD 北大核心 2006年第3期381-384,共4页 Microelectronics
关键词 BICMOS 带隙基准 低功耗 电源抑制比 BiCMOS Bandgap reference Low power PSRR
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参考文献8

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