摘要
本研究在实验室自制的10kW圆柱形多模谐振腔式MPCVD装置中,研究了高功率沉积环境下,氮气在不同基片温度下对沉积的金刚石膜的影响。利用SEM表征对金刚石膜表面形貌的变化进行了分析,并结合Raman以及XRD的表征结果,分析了不同沉积温度下,氮气体积浓度与金刚石膜质量和晶粒尺寸间的关系。结果表明：引入氮气会同时起到提高沉积速率和增加二次形核的作用,并且金刚石膜的质量会随氮气体积浓度的增加而下降。随着基片温度的降低,N2对金刚石膜的影响将更多的表现为增加二次形核率。在基片温度为750℃时,通过研究不同氮气体积浓度下金刚石膜晶粒尺寸和结晶度的变化,得出当氮气体积浓度保持在0.03%-0.07%之间时,能获得晶粒尺寸为50nm左右且结晶度较好的纳米金刚石膜。
The effects of nitrogen concentration on the deposition of diamond films were systematically investigated in a 10 kW home-made cylindrical overmoded MPCVD apparatus.Comprehensive analysis for the diamond films deposited in the condition of high microwave power as well as various nitrogen concentrations and substrate temperatures were carried out using the characterization results obtained from SEM,XRD and Raman.The results show that the injection of nitrogen could increase the deposition rate and secondary nucleation of diamond films,simultaneously.And the effect of increasing secondary nucleation would be dominated with the decrease of substrate temperature in the CVD diamond films growth.Therefore,there should be an appropriate nitrogen concentration range for the deposition of nanocrystalline diamond films with relatively high quality.The results of experiment carried out at the substrate temperature of 750℃ascertain that the relative high quality nanocrystalline diamond films with the crystal size of around 50 nm could be prepared with nitrogen concentration of0.03%- 0.07%.
出处
《金刚石与磨料磨具工程》
CAS
2015年第3期23-28,共6页
Diamond & Abrasives Engineering
基金
国家自然科学基金(No.11175137)
关键词
氮气体积浓度
高功率
微波等离子体
化学气相沉积
金刚石膜
nitrogen concentration
high microwave power
microwave plasma
chemical vapor deposition
diamond film
