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低温等离子体辅助脉冲直流磁控溅射制备TiN薄膜 被引量:4

Synthesis and Characterization of TiN Coatings Deposited at Mild Temperature
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摘要 采用一种新型的等离子体辅助脉冲直流磁控溅射溅射沉积方法,在低温状态(100℃)下制备了氮化钛薄膜,利用X射线衍射仪、轮廓仪、分光光度计、原子力显微镜对氮化钛薄膜进行了表征,研究了等离子体源在薄膜制备过程中的作用。结果表明采用该方法可在低温环境下制备高温抗氧化性能良好的氮化钛薄膜。当离子源功率为500 W时,制备的氮化钛薄膜表现良好氮化钛(111)择优取向,薄膜表面粗糙度为1.43 nm,红外反射率可达到90%。 The TiN coatings were synthesized by plasma assisted,pulsed dc reactive dual-target magnetron sputtering at 100℃. The impact of the TiN growth conditions,particularly the plasma source installed in the commercial ion plating reactor,on the microstructures,optical properties and oxidation – resistance of the TiN coatings was investigated. The TiN coatings were characterized with X-ray diffraction,atomic force microscopy,and spectrophotometer. The preliminary results show that the plasma source significantly reduces the TiN growth temperature and improves its optical properties. For example,the plasma assistance resulted in a better crystallinity,more compactness,lower surface roughness and higher oxidation-resistance at high temperatures. In addition,grown at a plasma power of500 W,the( 111) preferentially oriented TiN coatings have an averaged surface roughness of 1. 43 nm and a reflectance close to 90% in the infrared range.
出处 《真空科学与技术学报》 EI CAS CSCD 北大核心 2014年第11期1192-1196,共5页 Chinese Journal of Vacuum Science and Technology
关键词 低温等离子体 脉冲直流磁控溅射 氮化钛薄膜 高温抗氧化特性 Low temperature plasma Pulse-dc reactive magnetron sputtering TiN coating High temperature property
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