摘要
用XPS分别检测了在去离子水中浸泡 1 58h以及在 430℃高温加热 1h的离子束辅助沉积MoS2 Ta复合膜中Mo与S元素的电子结构。发现在浸泡和 430℃高温环境 ,MoS2 Ta复合膜的抗氧化特性远优于同样条件下沉积的纯MoS2 复合膜。结合TEM ,AES和XPS对MoS2 Ta膜的形态、结构、组成以及元素的化学态进行的观察和分析 。
The samples of MoS 2 Ta composite films,grown by ion beam assisted deposition,were treated in two different ways.One was immersed in deionized water for 158 hours and the other was heated at 430 ℃ for one hour.These tests indicate excellent oxidation resistance of the MoS 2 Ta films.The electronic properties of Mo and S and the crystal structures of the films were studied with transmission electron microscopy,Auger electron spectroscopy and X ray photoelectron spectroscopy to understand the possible mechanism of the enhancement of oxidation resistance.
出处
《真空科学与技术》
EI
CAS
CSCD
北大核心
2000年第4期282-285,299,共5页
Vacuum Science and Technology
