摘要
第三代半导体氮化镓化合物半导体已成为蓝光发光二极管的主流材料 ,国际上的产业化已成规模 ,国内也有多家处于中试阶段 ,由于氮化镓基材料中有如此多的问题没有解决 ,材料制备设备 ,器件工艺也极需改进及优化 ,这既给了中国科研人员及工程技术人员一个机遇 ,也使他们面临着严峻的挑战 .
The GaN based semiconductor, as the third generation of semiconductors, has been the main focus for blue light emitting diodes. Its production abroad has been greatly expanded but has only just started in China. In fact, scientists and engineers have to solve many problems and difficulties related to GaN based materials growth, device structure design and optimization of device processing, including modification of the MOCVD equipment to satisfy the requirements of high quality mass production. This is a great opportunity and challenge to the scientists and engineers in China.
出处
《物理》
CAS
北大核心
2002年第7期450-452,共3页
Physics
基金
国家高技术研究发展计划 (课题编号 :2 0 0 2AA311182 )资助项目
关键词
氮化镓
发光二极管
产业化
材料物理
半导体
gallium nitride, light emitting diode, industrialization, material physics
