摘要
通过采用硫代乙酰胺(CH3CSNH2)溶液浸泡和沉积SiNx薄膜对干法刻蚀后的GaN基LED进行了处理。处理后,LED器件在-5 V直流电压偏置下的漏电流下降到约1/6。X射线光电子能谱(XPS)分析结果表明,CH3CSNH2溶液处理能阻止GaN表面吸附O杂质,起到钝化的作用。沉积SiNx介质薄膜能有效隔绝LED器件和周围的环境。因此,这种两步方法能钝化干法刻蚀后GaN的侧壁,有效地减小LED器件的漏电流。
A two-step method to treat the dry-etched GaN-based LED chip is proposed using composed of dipping into CHaCSNH2 aqua solution and depositing SiNx dielectric film. After the treatment,the reversed leakage current under --5 V DC bias decreases to about 1/6. The X-ray photoelectron spectroscopy （XPS） results show that the CH3 CSNH2 sulfur treatment can prevent the surface from absorbing the O impurity, thus passivating the surface well. Depositing a SiNx film on the chip can isolate it from outside environment. This two-step treatment can efficiently reduce the reversed leakage current of GaN-based LED devices.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2006年第2期164-166,共3页
Semiconductor Optoelectronics
基金
国家高技术研究发展计划项目(2001AA313130
2004AA31G060)
北京市科技计划项目(D0404003040321)
