摘要
氮化镓是直接带隙半导体材料,在室温下有很宽的带隙(3.39eV).它在光电子器件如蓝光、紫外、紫光等光发射二极管和激光二极管方面有着重要的应用.本文系统介绍了氮化镓的各种制备方法,对其结构和性能关系的研究,揭示了它在半导体领域广泛且重要的应用前景.
Gallium nitride is a novel kind of semiconductor, whose direct band gap is 3.39eV at the room temperature. It has been proved to be a promising material for electronic and photoelectric devices. A good many of its growth methods have been discovered, and some of them had been implemented in production practice with monitoring systems. Some comparisons were made between different methods. The structure-performance dependence of GaN itself, GaN-based family and multinitrides have been summarized. The main fields of GaN-based material were presented. GaN-based material is being considered to be the excellent candidate of electronic device potentially used in high-temperature ,high-power and worst environment surroundings.
出处
《中国科学院研究生院学报》
CAS
CSCD
2005年第5期536-544,共9页
Journal of the Graduate School of the Chinese Academy of Sciences
关键词
氮化镓
半导体
制备方法
应用
gallium nitride, semiconductor, preparation, application
