摘要
本文总结了近年来我们在功能准一维纳米结构材料研究方面所获得的一些有意义的结果。借助于现代电子显微镜技术 ,不仅研究了硅、氮化稼、氧化锌等一维纳米材料的形貌和显微结构 ,还研究了其一维择优生长机理及小尺度效应。尤其是利用高能量分辨电子能量损失谱、高角环形暗场探头等先进技术 ,解决了一个传统X -光等结构分析手段所不能解决的难题 ,分析了一种SiOx
In this paper, we summarize some of the recent progress on investigation of semiconductor nanowires in which the electron microscopy plays a very important role. A diverse variety of semiconductor nanowires (Si, GaN, ZnO, and Ga 2O 3) was synthesized using laser ablation, or by physical vapor deposition (PVD) approaches. The morphology and microstructures of the nanowires were characterized by SEM and TEM. The unidirectional growth and size effect of the nanowires were investigated using HREM. The chemical composition and structure of one peculiar kind of composite nanocables were determined with the analysis via HAADF(high angle annular dart field) and PEELs(parallel electron energy loss spectrometry), it is impossible to be resolved by conventional X ray diffraction method.
出处
《电子显微学报》
CAS
CSCD
北大核心
2002年第3期259-264,共6页
Journal of Chinese Electron Microscopy Society
基金
NationalNaturalScienceFoundationofChina (NSFC
No .5 0 0 2 5 2 0 6 1 983 4 0 80 )
andbytheResearchFundfortheDoctoralProgramofHigherEducation (RFDP) China
