摘要
通过 VLSI 与超纯硅材料关系的论述,阐明了我国 VLSI 的发展急需解决高质量的超纯硅材料。提高大直径硅片的平整度;氧、碳含量稳定、均匀、可控;提高微区电阻率的均匀性;硅表面洁净、具有密封、屏蔽的防静电包装技术是当今硅材料发展的主攻课题。超纯硅材料的完美结晶特性和超精度加工技术水平取决于基础材料(化学试剂、高纯气体、)的高纯度、小颗粒和低杂质含量的控制。
This paper presents that the key question which effects the development of VLSI in our country is ultra-pure Si material with high quality through discussing the relations between VLSI and ultra-pure Si material.The main subject to be solved in the development of Si material today is to increase the flatness of big diameter Si wafer,to keep stable,uniform, controllable contents of oxygen and carbon,to improve resistivity uniformity of micro-zone,to keep cleaness of Si surface,to have sealed,shield and antistatic packaging technology.Excellent crystallinity and ultra-accuracy fabricating technique of ultra-pure Si material depends on high purity,small granule,low content of impurity of foundational material.
出处
《电子元器件应用》
2002年第3期47-50,共4页
Electronic Component & Device Applications
