摘要
利用多孔硅形成的选择性 ,在指定的硅衬底区域制作多孔硅作牺牲层。提出了先制作微结构 ,后进行阳极氧化 ,形成多孔硅牺牲层的工艺 ,由此制备出了良好的悬空结构 ,并对多孔硅形成的选择性、掩模材料和工艺条件进行了研究。
The porous silicon as a sacrificial layer could be fabricated in locally defined areas on the Si substrate,using the selective formation of porous silicon.Presented a technique of fabricating the microstructure first and then performing anode oxidation to form a sacrificial layer of porous silicon.The well freestanding microstructure has been made by this technique.The fabrication conditions and selectivity of formation of the porous silicon and masking layer are studied in detail.
出处
《微细加工技术》
2002年第2期48-52,共5页
Microfabrication Technology
基金
国家基础研究基金 973资助项目 (G19990 3310 8)
清华大学"985"基础研究基金资助项目(19992 5 0 0 1)
