摘要
采用调 Q YAG 激光器研究了半导体材料 GaAs,GaAs:Cr,InGaAs/GaAs 单量子阱(SQW)的倍频效应及其规律。测量了信号大小与晶体对称轴取向及入射、出射光偏振方向的关系。研究表明:材料表层结构的变化对于反射型倍频效应有很大影响。
We have studied the s(?)cond harmonic generation(SHG)of semiconductor GaAs,GaAs:Cr and InGaAs/GaAs single quantum well(SQW)by using Q-switched YAG laser(10ns,1.06 μm).We have measured the dependence of[the intensity of reflected SHG signalon the rotation angle of the crystal and the polarization of the incident and reflected light.Itis shown that the state of the surface has a strong influence on the reflected SHG signal.
出处
《应用激光》
CSCD
北大核心
1991年第3期107-109,106,共4页
Applied Laser
