摘要
对GaAs/Al_xGa_(1-x)As量子阱材料进行的光致发光(PL),横断面透射电子显微镜(XTEM)和反射电子显微镜(REM)的研究结果表明量子阱材料的结构质量对其光电性能有一定影响。另外,也观察到分子束外延对改进异质结界面的平整度有明显作用。
Using XTEM, REM and PL, the effect of structural quality on the optoelectronic properties of GaAs/Al_xGa_(1-x)As quantum wells grown by MBE has been studied. In addition, the
experimental results reveal that the flatness of interfaces in heterostructures can be improved
by MBE technique.
关键词
量子阱材料
电子显微镜
光致发光
Quantum well
Molecular beam epitaxy
Photoluminescence
Electron microscopy
Interface
