摘要
分析研究了热丝化学汽相沉积 (HFCVD)法工艺参数的变化对 Si C薄膜质量的影响。结果表明 ,合理的选取工艺参数 ,可在较低温度 (70 0～ 90 0℃ )下 ,沿 Si(1 1 1 )晶向异质生长出高质量的准晶 Si C薄膜。
The quality of SiC film grown by HFCVD has been investigated with technical parameter. Experiment results indicated that the high quality of hetero-structural films of SiC/Si was prepared on single-crystilline (111) silicon at lower temperature (700～900℃) after the optimum growing process of the thin film of the SiC.
出处
《西北大学学报（自然科学版）》
CAS
CSCD
北大核心
2002年第3期247-250,共4页
Journal of Northwest University（Natural Science Edition）
