摘要
基于对一维泊松方程的解析求解以及对表面势的迭代计算,建立了适于模拟n沟6H SiCMOSFET直流I V特性以及小信号参数的解析模型.模型采用薄层电荷近似,考虑了6H SiC中杂质不完全离化的特点以及界面态电荷对器件特性的影响,可用于所有的器件工作区.当漏偏压为0 05V、栅压为1 9V时,模拟得到的最大跨导值为54μS.模拟结果与实验数据有很好的一致性.该模型具有物理概念清晰且计算准确的优点,非常适于SiC器件以及电路研究使用.
Based on an analytical solution of the Poisson equation and iterative calculation of the surface potential, an improved physical-based analytical model which can be used in all the operation regions for the dc I-V characteristics and small signal parameters of the n-channel 6H-SiC MOSFET is proposed utilizing the charge-sheet approximation. The influences of incomplete ionization of deep-lying impurity state and the interface state charges that have an important effect on the 6H-SiC MOSFET are considered simultaneously. The simulated maximum transconductance is 54 μS at a gate voltage of 1.9 V when drain bias is 0.05 V. The comparison between simulations and physical measurements shows a good agreement. The model is simple in calculation and distinct in physical mechanism, and therefore it is suitable for the design of and the research on the SiC device and circuit.
出处
《西安电子科技大学学报》
EI
CAS
CSCD
北大核心
2005年第1期89-93,共5页
Journal of Xidian University
基金
教育部重点资助项目(02074)
国家部委预研基金资助项目(51408010601DZ1032)
