摘要
用 XPS 技术对射频溅射 SiC 薄膜的结构特征进行了分析。测定了以 Si(2p)和 C(1s)峰的相对移动定义的化学位移和谱中等离子体激元损失峰的特征损失能量。测定的结果揭示了该薄膜的结构特点,从而对其化学键的性质、成分和缺陷有了进一步的认识。
The structural characteristics of RF-sputtered SiC thin filmshas been analysed by XPS technique.The chemical shift defined bythe relative shift of Si(2p) and C(1s) peaks,as well as the loss energiesof the plasmon loss features observed in the spectra were measured.Theresults of the measurement have been used to characterize the film struc-ture.Further undersanding of the chemical bonding nature,composition anddefects of the RF-sputtered SiC thin films is obtained.
关键词
SIC
薄膜
射频
溅射
XPS分析
SiC
RF-sputtered film
chemical shift
plasmon loss feature
