摘要
采用热丝化学气相沉积(HFCVD)方法,以甲烷、硅烷和氢气为反应气体在单晶硅衬底上沉积碳化硅(SiC)薄膜材料.通过X射线衍射(XRD)、傅里叶变换红外光谱(FTIR)对SiC薄膜的晶体结构进行测试分析.利用原子力显微镜(AFM)对SiC薄膜的表面形貌进行分析.对该薄膜在室温和较高温度(410℃)下进行光敏特性测试,结果表明:该薄膜为SiC薄膜且对不同波长、不同功率的光有一定的敏感特性,较高温度下其敏感特性和室温下测试的结果大体一致,在高温光敏器件领域具有很大的应用潜力.
Silicon carbide thin films were deposited on monocrystalline silicon polished wafer substrate by hot filament chemical vapor deposition(HFCVD) in mixed gases of CH4,SiH4 and H2.Fourier infrared spectrum(FTIR) and X-ray diffraction(XRD) were performed to study structure properties of the thin films.The surface micrographies of the films were analyzed by atomic force microscope(AFM).In addition,photosensitivity characteristics of SiC thin films were also investigated at room and high temperature(410 ℃),respec...
出处
《华中科技大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2007年第S1期37-40,共4页
Journal of Huazhong University of Science and Technology(Natural Science Edition)
关键词
碳化硅薄膜
热丝化学气相沉积
光敏特性
SiC thin film
hot filament chemical vapor deposition（HFCVD）
photosensitivity
