期刊文献+

1024元MCT红外焦平面线列等角度扫描成像系统 被引量:2

MCT1024 Irfpa Equality Angle Scanning and Imaging System
在线阅读 下载PDF
导出
摘要 文章介绍了一种带读出电路的1024元短波MCT红外等角度扫描成像系统.叙述了该扫描成像系统的构成,在图像处理中应注意的两个主要问题:探测器非均匀性校正和行列图像信号的修正.该扫描成像系统采用国产1024元线列MCT(碲镉汞)焦平面器件,自行研制的同轴透射式光学系统和一维等角度并行扫描方式,扫描效率超过88%,扫描半周期为5秒,每帧像素为1024×1600.该系统在野外获得了较为理想的红外图像. It is presented in this paper a scanning and imaging system which consist of 1024-element MCT line short wavelength IRFPA with reading electrocircuit made in china. It is presented the composing of the imaging system and some key question of the imaging system during picture disposing: 1) nonuniformity correction; 2) Correction of lines and rows. With same axial transmission optics and a 1-D equality angle scanner and 1024×1600 pixels per frame, the scan efficiency of the sensor is over 88% and the half periods of scanner is 5 seconds. A better IRFPA picture has been obtained by use of this imaging system.
出处 《量子电子学报》 CAS CSCD 北大核心 2002年第3期273-277,共5页 Chinese Journal of Quantum Electronics
基金 中国科学院知识创新工程课题.
关键词 MCT1024元焦平面阵列 非均匀校正 行列图像修正 等角度扫描成像系统 MCT1024 focal plane array nonuniformity correction correction of lines and rows equality angle scanning and imaging system
  • 相关文献

参考文献2

二级参考文献4

共引文献4

同被引文献21

  • 1王兵学,张启衡,王敬儒,魏国.凝视型红外搜索跟踪系统作用距离模型中参数值的确定[J].红外技术,2004,26(4):6-10. 被引量:21
  • 2付小宁,刘上乾,牛建军.IRST系统的综合性被动测距算法研究[J].红外技术,2005,27(4):279-283. 被引量:9
  • 3Antoni Rogalski.Infrared detectors:status and trends[J].Progress in Quantum Electronics,2003,27:59-210.
  • 4Tang Dingyuan,Mi Zhengyu.Introduction to Optical-electro Devices (光电器件概论)[M].Shanghai:Shanghai Science and Technology Press,1989.
  • 5James C.Pickel,Arne H.et al.Radiation effects on photonic imagers-a historical perspective[J].IEEE Trans.Nucl.Sci.,2003,50:671.
  • 6Lai Zuwu.Radiation Hardening Electronics-Radiation Effects and Hardening Electronics (抗辐照电子学-辐照效应及加固原理)[M].Beijing:National Defence Industry Press,1998.
  • 7Cao Jianzhong,et al.Radiation Effects on Semiconductor Material (半导体材料的辐射效应)[M].Beijing:Science Press,1993.
  • 8Willardson R K,Beer A C.Semiconductors and Semimetals[M].New York:Academic Press,1981.18.
  • 9Moriwaki M M,Suour J R,et al.Ionizing radiation effects on HgCdTe Mis devices[J].IEEE Trans.Nucl.Sci.,1990,37:2034.
  • 10Waterman J R.Radiation induced interface trap limited storage times in 10 micron cutoff wavelength (Hg.Cd)Te Mis capacitors[J].IEEE Trans.Nucl.Sci.,1988,35:1313.

引证文献2

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部