摘要
本文报道了经300℃到800℃退火后的氢化非晶硅(a-Si∶H)/氢化非晶氮化硅(a-SiN_x∶H)多层膜77K 的光致发光性能。77K 的光致发光峰值能量随 T_a 增加而减少,其减少速度对几种样品是不同的,由厚度为20(?)的 a-Si∶H 子层组成的多层膜(d_(?)=20(?))要来得慢。当退火温度达到800℃时,d_(?)=20(?)的多层膜仍保留有光致发光特性,而对于 d_(?)=300(?)多层膜和单层 a-Si∶H 膜,当退火到600℃后光致发光特性已消失。文中提出了不同 a-Si∶H 子层厚度的多层膜光致发光特性上的差别是与 a-Si∶H/a-SiN_x∶H 界面氢比体内氢热稳定性来得高有关。后者由多层膜的红外吸收谱与退火温度依赖关系得到证实。
Photoluminescence (PL) properties of hydrogenated amorphous silicon(a-Si:H)/hydrogenated silicon nitride(a-SiN_x:H)multilayers at 77K after annealing from300℃ to 800℃ are reported.The decrease of 77K peak energy as T_(?) increases is dif-ferent for different samples,it is much Slower for multilayers with a-Si:H sublayerthicknesses of d_s=20(?).Tbe PL still exists for d_s=20(?) multilayers even it isannealed to 800℃,whereas PL disappears for single a-Si:H film and d_(?)=300 (?) multilayers at T_(?)=600℃.It is shown that the difference in PL for multilayers withvarying a-Si:H sublayer thicknesses is related with high thermal stability of a-Si:H/a-SiN_x:H interfacial hydrogen.The latter is also proved from annealing depende-nce of infrared absorption spectra of multilayers.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1991年第4期469-474,共6页
Journal of Inorganic Materials
关键词
氢化非晶硅
膜
光致发光
退火
Multilayers
Hydrogenated amorphous silicon
Photoluminescence
Infrared absorption spectra
Interfacial hydrogen
Thermal stability
