摘要
SOI(silicon on insulator :绝缘体上单晶硅薄膜 )技术已取得了突破性的进展 ,但一般SOI结构是以SiO2 作为绝缘埋层 ,以硅作为顶层的半导体材料 ,这样导致了一些不利的影响 ,限制了其应用范围 .为解决这些问题和满足一些特殊器件 电路的要求 ,探索研究新的SOI结构成为SOI研究领域新的热点 .如SOIM ,GPSOI,GeSiOI,SionAlN ,SiCOI,GeSiOI ,SSOI等 .文章将结合作者的部分工作 ,报道SOI新结构研究的新动向及其应用 .
Significant progress has been achieved in silicon-on-insulator(SOI) technology, but standard SOI structures employ SiO 2 as insulator and silicon as the semiconductor material. This results in some disadvantages and limits the areas of application. To solve these questions and meet the demands of special devices and circuits, new SOI structure have been investigated such as SOIM, GPSOI, GeSiOI, Si on AlN, SiCOI, GeSiOI and SSOI. An overview is presented of recent progress and applications of new SOI structures, with reference to some of our own work.
出处
《物理》
CAS
北大核心
2002年第4期214-218,共5页
Physics
基金
国家重点基础研究专项经费 (推准号 :G2 0 0 0 0 36 5 )资助项目
