摘要
为减少自加热效应 ,利用多孔硅外延转移技术成功地制备出一种以氮化硅为埋层的 SOI新结构 .高分辨率透射电镜和扩展电阻测试结果表明得到的 SOI新结构具有很好的结构和电学性能 ,退火后的氮化硅埋层为非晶结构 .
The single crystalline Si/Si 3N 4/substrate Si structures are successfully formed using electron beam evaporation of silicon on porous silicon and epitaxial layer transfer.The SOI structures are investigated by high resolution cross sectional transmission electron microscopy (XTEM) and spreading resistance profile (SRP). Experimental results show the buried Si 3N 4 layer is amorphous structure and the new SOI sample has good structural and electrical properties.
基金
国家重点基础研究专项经费 (No.G2 0 0 0 0 3 65 )
国家自然科学基金 (批准号 :699760 3 4)资助项目 ~~
