摘要
本文论述了SOI方法之一——ELO(外延横向覆盖生长)技术的特点和工艺方案。利用射频加热卧式常压外延设备进行了系统的工艺研究,重点探讨了如何提高ELO层的质量和如何减少单晶缺陷的问题。分别在10微米和15微米宽的SiO_2条状图形上生长出了硅单晶层,检测分析了ELO层的结构特性。基于ELO工艺的特点提出了利用HCl在位抛光减薄ELO层的工艺。
The characteristics and processing methods of ELO (Epitaxial Lateral Overgrowth), one of SOI technologies, have been described. Relatively all-round processing experiments have been done on the RF heated horizontal epitaxial reactor at atmospheric pressure. The influence of processing parameters on ELO film quality and defects has been emphatically investigated. Single crystal Si film has been overgrown on 10μm and 15μm SiO2 stripes respectively, and the structural characteristics of ELO film has been inspected and analysed. According to the peculiarity of ELO process, in situ etching of ELO film by HC1 has been proposed.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1989年第5期1-7,共7页
Acta Electronica Sinica
