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超薄膜外延生长的Monte Carlo模拟 被引量:19

Monte Carlo simulation of epitaxial growth in ultra-thin films
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摘要 用MonteCarlo (MC)方法对超薄膜外延生长过程进行了计算机模拟 .模型中引入Morse势描述粒子间的相互作用 ,考虑粒子的沉积、吸附粒子的扩散和蒸发三个过程 .研究了粒子间相互作用范围α和允许粒子行走的最大步数对薄膜生长形貌的影响 .结果表明 :在不同的α值下 ,随粒子行走步数的增加 ,薄膜的生长经历了从分散、分形、混合到团聚的过程 ;其中α=6时 ,基本观察不到粒子的分散生长过程 ;α值越小且粒子行走步数越小的情况下 。 The epitaxial growth of ultra-thin films was simulated by Monte Carlo method. The effect of the interaction between particles was described using Morse potential. Three processes of particle deposition, adatom diffusion and adatom evaporation were taken into account in our model. The effects of the range of interparticle interaction α and the maximum steps that a particle was permitted to migrate on the morphology of ultra-thin films were investigated. The results show that under different α, the films' growth undergoes four stages: disperse, fractal, mixture of fractal and conglobating, and conglobating with the increase of particle's migrating steps. Especially, when α is 6, the disperse growth is hardly observed. In addition, the less the α and the less the particle's migrating steps, the more easily the particles tend to be in disperse growth.
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 2002年第5期1108-1112,共5页 Acta Physica Sinica
关键词 超薄膜 外延生长 MORSE势 分形 MONTECARLO模拟 ultra-thin films, Monte-Carlo method, expitaxy growth, Morse potential, fractal
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