摘要
以锌条为溅射靶、普通空气为溅射和反应气体,采用简单的离子溅射仪在玻璃衬底上用直流二极反应溅射法沉积了高度c轴取向的透明ZnO薄膜。通过扫描电镜、X射线能量色散谱、X射线衍射和椭圆偏振测厚仪等手段对沉积样品进行了分析和表征,研究了薄膜结构、折射率n和相对介电常数εr与沉积工艺间的关系,并对结果进行了简要讨论。
Using zinc strip as sputtering target and air as reactive and sputtering gases, we have successfully prepared transparent zinc oxide (ZnO) thin films on glass substrate with a diode ion sputtering equipment by DC diode reactive sputter method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and elliptical polarized measurement instrument were employed to characterize the structure and the properties of the prepared samples. The results show that all the samples are transparent and c-axis oriented ZnO films, and the particle orientation and stress of the prepared films are dependent on the fabrication parameters, such as deposition time, temperature, and so on. These films with nanometer particles have as small as 1. 6 of relative dielectric coefficient and very suitable for the application as the piezoelectricity thin films.
出处
《真空电子技术》
2002年第2期13-15,19,共4页
Vacuum Electronics
基金
广东省教育厅自然科学研究项目(200048)
湛江市科技攻关项目资助课题
