摘要
首先介绍了稳定FEA电子发射均匀性和可靠性的几种结构 ,然后提出了以离子注入和干法刻蚀技术 ,在常规电阻率P型衬底上制成具有串联电阻负反馈特性的单片硅FEA。这些设计和工艺可供研究人员在设计具体FEA电子源的不同应用领域 ,如平版显示器、微波真空器件。
Several structures to improve the reliability and uniformity of FEA are presented. Then it was suggested that Si FEA with a series resistor feedback be fabricated on the P type substrate of common resistivity by the N ion implantation and dry etching.The methods described here can be used as a reference when applying FEA to different areas as an electron source,such as flat panel display, microwave vacuum devices, micro vacuum sensors and so on.
出处
《微细加工技术》
2002年第1期76-86,70,共12页
Microfabrication Technology
基金
国家自然科学基金资助项目 (6 96 710 11)
