摘要
对长波HgCdTe光导探测器进行了低于其永久损伤阈值的变功率激光辐照 ,测量辐照前后器件的电阻 温度特性 ,用电阻 温度特性研究材料参数的方法对实验结果进行拟合 ,结果表明辐照后HgCdTe探测器件的组分变大 ,并由此计算得到探测器性能突变后 ,器件的电子迁移率与电子浓度均有一定程度减小。
The long\|wave HgCdTe PC detectors were irradiated by laser beam. The power of the laser beam was changeable and below the permanent damnification threshold of the long\|wave HgCdTe PC detectors. The resistance\|temperature characteristic of the devices before and after the irradiation is measured, since the resistance\|temperature characteristic of the devices can be used to study the electric parameters of the material. This method is used to fit the result of the experiment. It indicates that the proportion of the element Cd become larger. It is concluded that the electronic mobility and electronic concentration of the devices would be reduced after the break of the performance of the detectors due to the irradiation of laser beam.
出处
《红外与激光工程》
EI
CSCD
北大核心
2002年第1期55-59,共5页
Infrared and Laser Engineering
基金
国家自然科学基金资助项目 (1 980 50 1 4 )
关键词
长波HgCdTe光导探测器
激光辐照
电学参数
Long\|wave HgCdTe PC detector
\ Laser irradiation
\ Resistance\|temperature characteristic
\ Fit
