摘要
研究了离子注入前后GaN的拉曼散射光谱 ,特别是其中几个在各种离子注入后都存在的拉曼散射峰 ,如 2 98,36 2和 6 6 1cm- 1 峰的性质 ,峰值强度随注入元素原子量、注入剂量和退火温度的变化关系 .上述三个拉曼散射峰的强度都随注入元素原子量的增加而降低 .当注入剂量增大时 ,36 2和 6 6 1cm- 1 峰值强度减少 ,而 2 98cm- 1 峰值强度却增大 .随退火温度的升高 ,这三个拉曼散射峰的强度先增加后降低 .对所观察到的实验现象和这三个峰的起源进行了分析和讨论 .
Raman spectroscopy measurements were performed on GaN samples before and after ion implantation.The properties of the three Raman peaks of 298,362 and 661cm -1 usually appeared in the ion-implanted GaN samples were systemically studies.The intensities of all the three Raman peaks decrease with increasing mass of the ions used in the ion implantation.The intensities of the 362 and 661cm -1 peaks decrease,while that of the 298cm -1 peak increases with increasing ion-implantation dose.With increasing annealing temperature,the intensities of all the three peaks increase first,and then decrease.The experimental phenomena and the origins of the three Raman peaks have been discussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2002年第3期629-634,共6页
Acta Physica Sinica
基金
国家自然科学基金 (批准号 :6 0 0 76 0 0 3)资助的课题~~
