摘要
ＧａＮ外延层的拉曼散射研究１李国华１韩和相１汪兆平２段树琨３王晓亮（１半导体超晶格国家重点实验室２集成光电子学国家重点联合实验室３半导体材料科学实验室中国科学院半导体研究所北京１０００８３）ＲａｍａｎＳｃａｔｅｒｉｎｇｏｆＧａＮＥｐｉｌａｙｅｒ１Ｌ...
Abstract We have measured the Raman scattering of GaN epilayer grown by MOVPE on AgAl 2O 4 substrate.The results show that the epilayers have a good crystal quality. All symmetry allowed optical phononsin GaN were observed in the back scattering and rightangle scattering configurations. The quasi LO and TO modes have also been observed in the X(Y,Y)ZandX(Z,X)Z configurations. The Raman spectra of GaN epilayer grown by MBE on (0001) and (0 11- 2) sapphire have also been measured and discussed.
出处
《光散射学报》
1997年第2期152-154,共3页
The Journal of Light Scattering
基金
国家自然科学基金
