摘要
利用六面顶高压设备制备了高密度、低脆性、纳米级的ZnO块体材料,用MDI/JADE5X射线衍射仪(Cu靶)和XL30S-FEG场发射扫描电子显微镜对高压样品的相组成、晶粒尺寸及微观形貌进行了表征.利用E55+FRA106/5傅里叶变换激光拉曼光谱仪通过ZnO块体样品位于50—500cm-1之内的拉曼光谱,研究了极性半导体纳米材料的拉曼光谱学特征.发现在极性半导体ZnO纳米块体材料中,没有出现明显的尺寸限制效应.
ZnO nano-bulk materials with high density and low brittleness is prepared on CS-1B 6 × 8000kN cubic high pressure apparatus. Grain sizes and microstructures of the samples have been characterized by X-ray diffraction and field emission scanning electron microscopy. The Raman spectra of polar semiconductor ZnO are studied by Raman spectrophotometer in the range of 50-500cm^-1 . No obvious size confinement effect is found in the polar semiconductor oxide.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2006年第7期3760-3765,共6页
Acta Physica Sinica
基金
国家自然科学基金(批准号:50472050)
河北省教委基金资助项目(批准号:2005309)资助的课题.~~
