摘要
研究了先用Murakami剂浸蚀WC相、再用 (H2 O2 +H2 SO4 )酸混合液除去Co相的二步法浸蚀YG15硬质合金基体表面预处理的过程 ;并在浸蚀过的硬质合金基体上 ,用热丝法沉积了金刚石薄膜。结果表明 ,二步浸蚀法可在基体表面深度为 6～ 12 μm的范围内 ,使Co含量从 15 %降低到 0 .85～ 5 .42 % ,并使硬质合金基体的表面粗糙度增加到Ra=1.0 μm ,但会导致硬质合金基体表面的硬度从 85 .5HRA降低至 83 .3HRA ;在该硬质合金基体沉积金刚石薄膜之后 ,发现样品的金刚石薄膜组织结构具有 { 110 }和 { 111}面取向 。
Two-step method etching pretreatment at cemented carbide of YG15 grade substrate was investigated prior to HF CVD deposition, using first Murakami reagent for 5～10 min., then an H 2O 2:H 2SO 4=7:3 solution for 20～35 min. The results show that the Co content of the substrate surfaces could be reduced from 15% to 0.85%～5.42% within the etching depth of 6～12 μm, the surface roughness of the substrates was increased up to R a=1.0 μm, as well as the substrates hardness was decreased from 85.5 HRA to 83.3 HRA after the two-step method etching. A slight preference towards {110} and {111} orientation was observed from the XRD patterns and SEM micrograph of diamond film on YG15 grade substrate. The indentation testing shows that the good adhesion between diamond film and the substrate could be obtained by HF CVD process.
出处
《粉末冶金技术》
CAS
CSCD
北大核心
2001年第6期365-368,共4页
Powder Metallurgy Technology
基金
湖南省科委和湖南省有色金属材料重点实险室基金
关键词
二步侵蚀法
表面预处理
硬质合金
金刚石涂层
two-step etching method
surface pretreatment
cemented carbides
diamond coatings
