摘要
采用不同的两步处理方式浸蚀YG3 和YG6低钴硬质合金基体表面,随后在热丝化学气相沉积装置上沉积了金刚石薄膜,分别用扫描电子显微镜、能谱仪以及洛氏硬度计对样品进行了分析检测。结果表明先采用Murakami剂30 min腐蚀碳化钨相,再用3H2SO4+7 H2O230 s混合酸去除钴相,样品金刚石薄膜形核密度高,结晶质量较好,金刚石涂层与硬质合金基体结合良好。同一处理工艺,YG6系列样品处理效果更好。基体钴含量的降低对改善硬质合金与金刚石涂层间的附着性能有利。
Diamond films were deposited on Tungsten Carbide-3%Cobalt and Tungsten Carbide-6%Cobalt with different two-step surface pretreatments by Hot Filament Chemical Vapor Deposition (CVD). The surface morphology, composition and adhesion of the diamond films were investigated by means of Scanning Electron Microscope (SEM), Energy Dispersion Spectroscope(EDS) and Rockwell hardness tester. The results showed that using Murakami reagent for etching 30 min, then H2SO4: H2O2=3:7 solution for removing cobalt 30s, the diamond nucleation density of these two kinds of samples is greatly increased, resulting in a good adhesion between diamond film and the substrate. Under the same pretreatment conditions, the quality of the diamond coating on the serious of WC6 %Co samples is much better. The adhesive strength of diamond film and the cemented carbide can be greatly enhanced by reducing the content of cobalt on the surface of WC substrate.
出处
《中国表面工程》
EI
CAS
CSCD
2003年第6期16-20,共5页
China Surface Engineering
关键词
金刚石薄膜
硬质合金
两步处理
附着力
diamond films
cemented carbides
two-step pretreatment
adhesion
