摘要
文叙述了利用B-S法生长CaF_2晶体时,控制坩埚锥部的固液界面而获得大块单晶的方法。B-S法生长的晶体往往需要用退火的方法清除残余应力。我们发现为消除残余应力存在一个最佳的退火温度;该温度低于通常的退火温度。比较了用引上法和B-S法生长的CaF_2晶体的位错密度分布;引上法非常类似于半导体的情况。本文还分析了CaF_2晶体中由CaO或CaS形成的光散射体及其择优沉积规律,并讨论了控制这些光散射体的方法。
The B-S method to obtain large single crystals by control of solid-iiquid surface at the conical bottom of cruacible is discussed. The crystals grown by B-S technique need a heat processing to remove residual stress. It is discovered that there is a most favored temperature for annealing crystals in removal of residual stress This temperature is Below the one in the sense of ordinary heat processing. C-Z grown crystal dislocation distribution has been compared with B-S grown one. The result is found to be quite similar to the one received from semiconductor crystals The optical scattering centers in CaF_2 due to CaO or CaS and their selective precipitation are analysed, along with technique designed to eliminate above scattering centers.
出处
《人工晶体学报》
EI
CAS
CSCD
1991年第1期46-54,共9页
Journal of Synthetic Crystals
关键词
氟化钙
晶体生长
晶体
布里奇曼法
CaF_2 crystal, annealing, scattering center, inclusion, negative crystal, CaO, CaS, dislocation distribution, sub-lattice,melting, RAP method,Bridgman method
