摘要
通过对单晶生长特性与缺陷观测分析,研究了用提拉法生长优质Li_2B_4O_7单晶的工艺条件,并成功生长φ32±1mmLi_2B_4O_7单晶。
The growth conditions of high quality Li_2B_4O_7 single crystalsin CZ technique were investigated on the basis of experimental observationsand analyses of their grow characteristics and defects. Li_2B_4O_7 single crystalsof φ 32mm have been grown successfully.
出处
《人工晶体学报》
EI
CAS
CSCD
1990年第4期288-291,共4页
Journal of Synthetic Crystals
关键词
四硼酸锂
晶体
提拉法
单晶生长
Li_2B_4O_7crystal
CZ technique
growth conditions
