摘要
抛光片表面总厚度变化是衡量砷化镓抛光片表面质量的重要几何参数指标 ,对后序的器件工艺及集成电路工艺有着至关重要的影响。通过对影响总厚度变化的抛光液组分进行实验分析 ,在抛光工艺中采用化学机械抛光的方法抛出合格的双面抛光片 ,采用统计的方法对测得的总厚度变化数据进行分析 。
Total thickness variation(TTV)of polished wafer surface is an important parameter,it has an critical effect on the device and integrated circuits(IC)fabrication process.The article is addressed on the effect of slurrys composition on TTV during chemical mechanical polishing(CMP).Through analyzing the data with SPC technology,the best polishing process is found.
出处
《半导体情报》
2001年第5期55-57,共3页
Semiconductor Information
