摘要
本文是根据晶体管的发射结偏压随温度变化的关系,来代换扩散硅压力传感器中利用扩散电阻进行温度补偿的原理和优越性。
The paper is based on the principle and advantage of the relation that the bias voltage of emi-tter junction of transistors varies with temperature, the way of using the sprading resistance to make up for temperature. In spreading silicon transistor is replaced.
出处
《辽宁大学学报（自然科学版）》
CAS
1991年第1期7-11,16,共6页
Journal of Liaoning University：Natural Sciences Edition
