摘要
随着器件尺寸的不断减小 ,直接隧穿电流将代替 FN电流而成为影响器件可靠性的主要因素 .数值求解的结果表明 :镜像势引起的势垒降低对超薄栅 MOS直接隧穿电流有较大的影响 .利用 WKB近似方法 ,获得了镜像势对直接隧穿电流影响的定性表达式 .镜像势对直接隧穿电流的影响随着栅电压的减小而增大 。
The direct tunneling current is replaced FN tunneling as the main issue affecting the MOS device reliability.The barrier lowering induced by image potential is proved to influence the tunneling current largely.An qualitative equation is obtained for the first time by using WKB app roximation.The effects of image potential on the tunneling current increase with the decrease of the applied voltage across the oxide,but decrease with the decr ease of the oxide thickness.
