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镜像势对Ⅱ-Ⅵ族和Ⅲ-Ⅴ族半导体双势垒共振隧穿系统Ⅰ-Ⅴ特性的影响

THE EFFECTS OF IMAGE POTENTIAL ON THE Ⅰ-Ⅴ CHARACTERISTICS OF DBRT SYSTEMS OF Ⅱ-Ⅵ AND Ⅲ-Ⅴ COMPOUED SEMICONDUCTORS
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摘要 本文围绕镜像势对双势垒共振隧穿系统电流—电压特性的影响作了系统的分析探讨,并在考虑和不考虑像势影响的两种情况下对该特性作了计算比较。结果清楚显示镜像势对具较大介电性能差别的系统之电流—电压曲线会引起明显的峰的漂移。 The effects of image potential on the Ⅰ-Ⅴ characteristics of DBRT like structures are discussed.The results with and without image potential taken into account are compared.It is shown clearly that the image potential would cause significant shift in the Ⅰ-Ⅴ curve of the systems made of materials with great difference in dielectric properties.So the correction of image potential to the Ⅰ-Ⅴ characteristics of such systems should not be neglected when the performance of the system devices is studied.
作者 滕小瑛
出处 《内蒙古工业大学学报(自然科学版)》 1999年第1期26-30,共5页 Journal of Inner Mongolia University of Technology:Natural Science Edition
关键词 镜像势 Ⅱ-Ⅵ族半导体 Ⅲ-Ⅴ族半导体 DBRT image potential DBRT diodes transmissivity Ⅰ-Ⅴ characteristics
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