摘要
研究了粗糙界面对电子隧穿超薄栅金属 -氧化物 -半导体场效应晶体管的氧化层的影响 .对于栅厚为 3nm的超薄栅 MOS结构的界面用高斯粗糙面进行模拟来获取界面粗糙度对直接隧穿电流的影响 ,数值模拟的结果表明 :界面粗糙度对电子的直接隧穿有较大的影响 ,且直接隧穿电流随界面的粗糙度增加而增大 ,界面粗糙度对电子的直接隧穿的影响随着外加电压的增加而减小 .
With the aggressive scaling down of MOS,the direct tunneling current will replace FN tunneling as the main issue effecting the MOS devices reliability.The interface roughness effects on the electron tunneling in the ultra-thin oxide of a me- tal-oxide- semiconductor field transistor are investigated theoretically.Those on the direct tunneling current are also obtained via the simulation of roughness interfaces with Gaussian rough map.The numerical results of simulation show that the direct tunneling current increases with the increase of the interfaces roughness,while the effects of the interfaces roughness on the direct tunneling current decrease with the increase of applied voltage.
基金
国家科技攻关项目 ( G2 0 0 0 -0 36 5 0 3)
高校博士点基金 ( 970 0 0 113)资助项目~~
