摘要
建立了单栅石墨烯场效应晶体管处于栅氧化层界面平整时的电流模型,在此基础上分析氧化层界面粗糙度对源漏电流的影响.研究表明:粗糙界面会导致源漏电流有所下降;且粗糙度越大,源漏电流下降越多.
A model about the current of single-gate graphene field-effect transistors with a flat surface between gate and gate oxide has been proposed. Based on this model, the effect of surface roughness on the drain current has been considered. And analysis and research about these two models have been discussed. The results display that the surface roughness leads to the decline in drain current, and that the rougher surface we have, the greater declining the current is going to be.
出处
《微电子学与计算机》
CSCD
北大核心
2012年第12期154-156,共3页
Microelectronics & Computer
基金
国家自然科学基金项目(61076102
6107680)
关键词
石墨烯
场效应晶体管
表面粗糙
电流
graphene
field-effect transistors
surface roughness
current
