摘要
用改进的垂直气相法生长的富镉 Cd Se单晶 ,其电阻率为 10 7Ω· cm量级 ,电子陷阱浓度为 10 8cm- 3量级 ,且能将注入其中的部分电荷储存起来。分析认为 ,晶体的高电阻率及储存电荷的能力都是由 Se空位引起的 .
CdSe single crystals with excess Cd are grown by using the modified vertical unseeded vapor growth method,with the medium resistivity(106-107Ω·cm) obtained.I-V curves of the as-grown crystals are measured and analyzed according to the space charge limited current theory.The electron trap density of 108 cm -3 and the reserved charge in as-grown crystals are found and attributed to the presence of Se vacancies.
基金
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