摘要
本文计算了陷阱浓度对 Zn S:Mn薄膜电致发光 Mn中心临界浓度的影响 ,在不同的陷阱浓度下 ,计算了发光亮度随发光中心浓度的变化。计算结果表明 ,降低陷阱的浓度可以显著地提高临界浓度 ,并且发光亮度也随之增大。
In this article the influence of trap concentration on the critical concentration of Mn centers in ZnS:Mn thin film electroluminescence and the change of brightness with the concetration of Mn centers under different trap concentrations have been calculated.The results indicate that by reducing the trap concentraiton the critical concentration can be increased notably and the brightness also can be increased.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2001年第4期337-339,共3页
Journal of Optoelectronics·Laser
基金
国家"八六三"计划资助项目! (863 -715 -0 0 82 )
国家自然科学基金!资助项目 (199740 0 2 )
